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 SE2582L
RangeChargerTM 2.4 GHz Power Amplifier with Power Detector
Applications
DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g) Access Points, PCMCIA, PC cards
Product Description
The SE2582L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The SE2582L is completely integrated including all RF matching (input, output and interstage) as well as a high performance power detector for closed loop monitoring of the output power. The SE2582L includes a digital enable control for device on/off control. This functionality allows for a seamless interface with CMOS transceivers, without the use of external logic or reference voltages. The SE2582L temperature compensated power detector has is highly immune to mismatch at its output with less than 1.5 dB of variation with a 2:1 mismatch. The part operates at a low quiescent current making it ideal for low power applications such as mobile phone and PDA devices. Remark Samples Tape and Reel Standard
Features
Single 3.3 V Supply Operation Integrated matching: Input, Interstage and Output Integrated power amplifier enable pin (VEN) Buffered, temperature compensated power detector 17.5 dBm, EVM = 3 %, 802.11g, OFDM 54 Mbps Low quiescent current of 48 mA 30 dB Gain Lead Free and RoHS compliant package 16 pin 3 mm x 3 mm x 0.9 mm QFN
Ordering Information
Part Number SE2582L SE2582L-R SE2582L-EK1 Package 16 Pin QFN 16 Pin QFN Evaluation Kit
Functional Block Diagram
Vcc
VEN
Bias Generator
RFin
Input Match
Stage 1
Interstage Match
Stage 2
Interstage Match
Stage 3
Output Match
RFout
Detector
Vdet OUT
Figure 1: Functional Block Diagram
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SE2582L
RangeChargerTM 2.4 GHz Power Amplifier with Power Detector
Pin Out Diagram
SE2582L Top View
VCC VEN N/C N/C
SE2582L Bottom View
VCC VEN 15 N/C N/C 16 1 2 3 Die Pad 4 6 5
13
13 12 11 10 N/C N/C N/C N/C N/C N/C N/C N/C 12 11 10 9 8
16
RFin N/C N/C N/C
1 2 3 4 5 6 Die Pad
15
14
14
RFin N/C N/C N/C
9 8
7
RFout
N/C
7
N/C
N/C
N/C
VdetOUT
Figure 2: SE2582L Pin-Out Diagram
Pin Out Description
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Name RFin N/C N/C N/C Vdet OUT N/C RFout N/C N/C N/C N/C N/C N/C Vcc VEN N/C Description Power Amplifier RF input, DC block required No Connect No Connect No Connect Analog Power Detector Output No Connect Power Amplifier RF Output, DC block required No Connect No Connect No Connect No Connect No Connect No Connect Supply Voltage Digital pin used to power up and power down the IC No Connect
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VdetOUT
RFout
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SE2582L
RangeChargerTM 2.4 GHz Power Amplifier with Power Detector
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings for a long period of time may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations. Symbol VCC VEN RFIN TSTG Tj Definition Supply Voltage on pin VCC Power Amplifier Enable RF Input Power, RFOUT terminated in 50 match Storage Temperature Range Maximum Junction Temperature Min. -0.3 -0.3 -40 Max. 4 4 10 150 150 Unit V V dBm C C
Recommended Operating Conditions
Symbol VCC TA Supply Voltage Ambient Temperature Parameter Min. 2.9 -10 Max. 3.6 85 Unit V C
DC Electrical Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 C, as measured on SiGe Semiconductor's SE2582L-EV1 evaluation board, unless otherwise noted. Symbol ICC-802.11b ICC-802.11g IQC IOFF VENH VENL Parameter Supply Current Supply Current Quiescent Current Supply Current Logic High Voltage Logic Low Voltage Conditions POUT = 20 dBm, 11 Mbps CCK signal, BT = 0.45, POUT = 17.5 dBm, 54 Mbps OFDM signal, 64 QAM No RF VEN = 0 V, No RF Min. 1.3 0 Typ. 134 105 48 0.5 Max. 10 VCC 0.5 Unit mA mA mA A V V
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SE2582L
RangeChargerTM 2.4 GHz Power Amplifier with Power Detector
AC Electrical Characteristics
802.11b/g AC Electrical Characteristics
Conditions: VCC = VEN = 3.3 V, f = 2.45 GHz, TA = 25 C, as measured on SiGe Semiconductor's SE2582L-EV1 evaluation board, unless otherwise noted Symbol fL-U P1dB S21 S21 Parameter Frequency Range Output 1dB compression point Small Signal Gain Gain Variation over band Adjacent Channel Power Ratio ACPR 2f 3f EVM tr, tf STAB 11 MHz offsets from carrier 22 MHz offsets from carrier Harmonic Conditions No modulation PIN = -25 dBm PIN = -25 dBm, fIN= 2400 to 2500 MHz POUT = 20 dBm, 11 Mbps CCK signal, BT = 0.45 POUT = 20 dBm, CW POUT = 17.5 dBm, 54 Mbps OFDM signal, 64 QAM POUT = 17.5 dBm, 54 Mbps OFDM, 64 QAM, VSWR = 6:1, all phases POUT = 17.5 dBm, 54 Mbps OFDM, 64 QAM, VSWR = 3:1, all phases Min. 2400 Typ. 24 30 1 Max. 2500 Unit MHz dBm dB dB
-
-37 -52 -48 -50 3.0 0.5
-
dBc dBc dBc % us
Error Vector Magnitude Rise and Fall Time Stability Tolerance to output load mismatching
All non-harmonically related outputs less than -50 dBc/100 kHz No damage
VSWR
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Mar-27-2007
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SE2582L
RangeChargerTM 2.4 GHz Power Amplifier with Power Detector
Power Detector
Conditions: VCC = VEN = 3.3 V, f = 2.45 GHz, TA = 25 C, as measured on SiGe Semiconductor's SE2582L-EV1 evaluation board, unless otherwise noted Symbol PDR VDET VDET VDET PDZOUT PDZLOAD Parameter POUT detect range Detector voltage Detector voltage Detector voltage Output Impedance DC load impedance Conditions POUT = 20 dBm POUT = 17.5 dBm POUT = NO RF Min. 0 250 10 Typ. 0.8 0.65 0.3 Max. P1dB 700 Unit dBm V V V k
SE2582L Power Detector Characteristic
2.4GHz 1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 2.45 GHz 2.5GHz
Voltage (V)
Output Power (dBm)
Figure 3: SE2582L Power Detector Characteristic over Frequency
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SE2582L
RangeChargerTM 2.4 GHz Power Amplifier with Power Detector
Typical Application Circuit
3.3 V Supply Voltage
From Baseband/Transceiver N/C VCC 14 13 12 N/C 2 N/C 3 N/C 4 5 6 Die Pad 11 VEN N/C
16 From Baseband/Transceiver RFin 1 N/C
SE2582L
10 9
15
N/C N/C N/C
7 N/C
8 RFout N/C
To Baseband/Transceiver
VdetOUT
To Switch/Filter/Antenna
Figure 4: Typical Application Circuit
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SE2582L
RangeChargerTM 2.4 GHz Power Amplifier with Power Detector
Package Diagram
Figure 5: SE2582L Package Diagram
Branding
Pin 1 Identifier Terminal Finish Pin 1 Part Number Lot Code
SiGe 2582L Lot Code
e1
Figure 6: SE2582L Branding
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SE2582L
RangeChargerTM 2.4 GHz Power Amplifier with Power Detector
http://www.sige.com
Email: sales@sige.com
Customer Service Locations
North America 1050 Morrison Drive, Suite 100 Ottawa ON K2H 8K7 Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933
Hong Kong Phone: +852 3428 7222 Fax: +852 3579 5450 San Diego Phone: +1 858 668 3541 Fax: +1 858 668 3546 United Kingdom Phone: +44 1264 850754 Fax: +44 1264 852601
Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an "as is" basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. RangeCharger , StreamCharger , and PointCharger Copyright 2007 SiGe Semiconductor, Inc. All Rights Reserved
TM TM TM
are trademarks owned by SiGe Semiconductor, Inc.
212-DST-01
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QA032707
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